pb-free package is available lbas16tw1t1g device marking surface mount fast switching diode fast switching speed ultra-small surface mount package for general purpose switching applications high conductance also available in lead free version features characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1) i fm 300 ma average rectified output current (note 1) i o 150 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 2.0 1.0 a power dissipation (note 1) p d 200 mw thermal resistance junction to ambient air (note 1) r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (br)r 75 v i r = 1 a forward voltage (note 2) v f 0.715 0.855 1.0 1.25 v i f = 1.0ma i f = 10ma i f = 50ma i f = 150ma reverse current (note 2) i r 1.0 50 30 25 a a a na v r = 75v v r = 75v, t j = 150 c v r = 25v, t j = 150 c v r = 20v total capacitance c t 2.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr 4.0 ns i f = i r = 10ma, i rr = 0.1 x i r ,r l = 100 electrical characteristics @ t a = 25 c unless otherwise specified notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. maximum ratings @ t a = 25 c unless otherwise specified lbas16tw1t1g=ka2 leshan radio com p an y , ltd. lbas16tw1t1g rev.o 1/3 s-lbas16tw1t1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. z
100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 t a = 85c t a = 25c t a = ? 40c t a = 150c t a = 125c t a = 85c t a = 55c t a = 25c 010 20 30 4050 10 1.0 0.1 0.01 0.001 02 4 6 8 0.68 0.64 0.60 0.56 0.52 i f , forward current (ma) c d , diode capacitance (pf) v f , forward voltage (volts) figure 2. forward voltage v r , reverse voltage (volts) figure 3. leakage current v r , reverse voltage (volts) figure 4. capacitance i r , reverse current ( a) leshan radio com p an y , ltd. lbas16tw1t1g, rev.o 2/3 s-lbas16tw1t1g
notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl xx m xx = specific device code m = date code generic marking diagram* 1 6 sc?88 dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e xx 1 6 m or h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 leshan radio com p an y , ltd. rev.o 3/3 lbas16tw1t1g, s-lbas16tw1t1g
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